Last year, most flagship phones still used UFS 2.1 flash memory, and some products ushered in UFS 3.0. UFS 3.0 began to popularize earlier this year, and now Samsung has started mass production of 512GB UFS 3.1 flash memory. Will it be a must-have for the next flagship phone?
Samsung said that this 512GB eUFS 3.1 flash chip can provide a faster data transfer experience compared to previous-generation products, solid state drives, and MicroSD cards. Its continuous write speed exceeds 1.2GB / s, which is three times that of the previous generation.
In addition, this product has a continuous write speed of 2100MB / s, random read and write speeds of 100,000 IOPS and 70,000 IOPS, respectively.
Based on the data provided by Samsung, the speed of this eUFS 3.1 chip can reach more than twice that of SATA hard disks, which is 60% faster than the current UFS 3.0 common on the market.
Samsung eUFS 3.1 product line also includes 128GB and 256GB capacity versions. The speed of the low-capacity version will be affected to some extent, but it is also undoubtedly the top level in mobile phone storage at present.
At present, Samsung's P1 production line in the Pingze factory has started to produce the sixth-generation V-NAND, and the new X2 production line in Xi'an has also started to produce the fifth-generation V-NAND. These will be mainly used in Samsung's solid-state drives and UFS products.
In terms of specific products, according to official reports yesterday, Redmi K30 Pro will use UFS 3.1 storage. It is believed that more and more flagship mobile phones will use this product in the future.